Approach to provide high external voltage for flash memory erase

Details Approach to provide high external voltage for flash memory erase Approach to provide high external voltage for flash memory erase

1999-08-19

2000-12-26

Mai, Son

Static information storage and retrieval

Floating gate

Particular biasing

36518518, 36518531, G11C 1604

Patent

active

06166961&

ABSTRACT:
In this invention external high voltages are connected to a chip containing a flash memory that are connected to selected cells to be erased. Internal pump circuits contained on the chip are turned off while the external voltages are used. The external voltages, a high negative voltage and a high positive voltage, are connected to gates and sources respectively of selected cells to be erased by a voltage control module. The external voltages are used during manufacture during program/erase operations to perform the erase function efficiently. The internal high voltage pump circuits are used to erase flash memory cells after being assembled on a circuit board by a user. Two level shifter circuits are disclosed that form a part of the voltage control module. The level shifter circuits apply voltages to the flash memory cells and provide voltages that select and deselect the cells for erasure.

REFERENCES:
patent: 5491656 (1996-02-01), Sawada
patent: 5668758 (1997-09-01), Yiu et al.
patent: 5781477 (1998-07-01), Rinerson et al.
patent: 5818758 (1998-10-01), Wojciechowski
patent: 5942808 (1999-08-01), Kaneko et al.
patent: 5991221 (1999-11-01), Ishikawa et al.

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