Applying negative gate voltage to wordlines adjacent to...

Details Applying negative gate voltage to wordlines adjacent to... Applying negative gate voltage to wordlines adjacent to...

2011-08-09

2011-08-09

Le, Vu A (Department: 2824)

Static information storage and retrieval

Floating gate

Disturbance control

C365S185170

Reexamination Certificate

active

07995386

ABSTRACT:
Systems, methods, and devices that facilitate applying a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected during a read or verify operation to facilitate reducing adjacent wordline disturb are presented. A memory component can comprise an optimized operation component that can apply a predefined negative gate voltage to wordlines adjacent to a selected wordline associated with a memory cell selected for a read or verify operation, based at least in part on predefined operation criteria, to facilitate reducing adjacent wordline disturb in the selected memory cell to facilitate reducing a shift in the voltage threshold and maintain a desired operation window. The optimized operation component optionally can include an evaluator component that can facilitate determining whether a negative gate voltage applied to adjacent wordlines is to be adjusted to facilitate reducing adjacent wordline disturb below a predetermined threshold amount.

REFERENCES:
patent: 7257024 (2007-08-01), Rudeck et al.
patent: 7286408 (2007-10-01), Higashitani
patent: 7636257 (2009-12-01), Lue

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