Application specific integrated circuit semiconductor device hav

Details Application specific integrated circuit semiconductor device hav Application specific integrated circuit semiconductor device hav

1996-09-25

2000-05-02

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257206, 257401, 257369, H01L 2710, H01L 2976, H01L 2994

Patent

active

060575689

ABSTRACT:
A semiconductor integrated circuit is disclosed which avoids operating speed degradation resulting from an increase of the gate resistance due to making the size of the device small. In a basic cell 103 comprising a group 101 of P-channel MOS transistors and a group 102 of N-channel MOS transistors, the gate width of all the MOS transistors constituting the basic cell 103 is set below 7 .mu.m, and the gate electrodes 108a, 108b, 109a, 109b are formed to surround the perimeter of source or drain diffusion areas 106a, 106c, 107a, 107c of the MOS transistors to form an electrically closed loop.

REFERENCES:
patent: 4975758 (1990-12-01), Crafts
patent: 5317175 (1994-05-01), Throngnumchai
patent: 5397906 (1995-03-01), Kumagai

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