Application of thin crystalline Si.sub.3 N.sub.4 liners in shal

Details Application of thin crystalline Si.sub.3 N.sub.4 liners in shal Application of thin crystalline Si.sub.3 N.sub.4 liners in shal

1995-09-21

1997-07-01

Dang, Trung

Fishing, trapping, and vermin destroying

437 72, 437241, 148DIG50, H01L 2176

Patent

active

056438230

ABSTRACT:
Silicon integrated circuits use a crystalline layer of silicon nitride (Si.sub.3 N.sub.4) in shallow trench isolation (STI) structures as an O.sub.2 -barrier film. The crystalline Si.sub.3 N.sub.4 lowers the density of electron traps as compared with as-deposited, amorphous Si.sub.3 N.sub.4. Further, a larger range of low-pressure chemical-vapor deposited (LPCVD) Si.sub.3 N.sub.4 films can be deposited, providing a larger processing window for thickness controllability. An LPCVD-Si.sub.3 N.sub.4 film is deposited at temperatures of 720.degree. C. to 780.degree. C. The deposited film is in an amorphous state. Subsequently, a high-temperatures rapid-thermal anneal in pure nitrogen or ammonia is conducted at 1050.degree. C. to 1100.degree. C. for 60 seconds.

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