Application of facet-growth to self-aligned Shottky barrier gate

Details Application of facet-growth to self-aligned Shottky barrier gate Application of facet-growth to self-aligned Shottky barrier gate

1974-10-22

1976-03-16

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 148175, 357 15, 357 23, 357 56, 357 60, H01L 21205, H01L 2128, H01L 2948

Patent

active

039436225

ABSTRACT:
A semiconductor device and particularly a self-aligned Schottky barrier gate field-effect transistor is made by epitaxial growth of facets corresponding to the source and drain regions on a surface of a semiconductor body through spaced apart preferably elongated windows in a masking layer and overgrowing edge portions of the masking layer at the windows to form overgrown portions on the facets. The channel region of the transistor is previously formed in the semiconductor body, preferably by epitaxial growth of a layer on a surface of a semiconductor body having a semi-insulating layer adjoining the surface. After removal of the masking layer, the Schottky barrier gate is self-aligned by deposition of metal on the unshielded portions of the planar surface between the facets.

REFERENCES:
patent: 2802159 (1957-08-01), Stump
patent: 3375417 (1968-03-01), Hull et al.
patent: 3634150 (1972-01-01), Horn
patent: 3678573 (1972-07-01), Driver
patent: 3746908 (1973-07-01), Engeler
dumke et al., "GaAs Field-Effect . . . Self-Registered Gates," I.B.M. Tech. Discl. Bull., Vol. 14, No. 4, Sept. 1971, pp. 1248-1249.
Napoli et al., "Switching Times of . . . GaAs Field-Effect Transistor," RCA Review, Vol. 32, Dec. 1971, pp. 645-649.
Tausch et al., "Novel Crystal Growth . . . GaAs Overgrowth. . . ." J. Electrochem. Soc., Vol. 112, No. 7, July, 1965, pp. 706-709.
Dumin, D. J., "Selective Epitaxy Using Silane and Germane," J. Crystal Growth 8(1), 1971, pp. 33-36.

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