Application of electronic properties of germanium to inhibit N-t

Details Application of electronic properties of germanium to inhibit N-t Application of electronic properties of germanium to inhibit N-t

1990-04-18

1992-03-10

Hille, Rolf

357 16, 357 42, 357 64, 357 91, H01L 29167

Patent

active

050953583

ABSTRACT:
A method of inhibiting dopant diffusion in silicon using germanium is provided. Germanium is distributed in substitutional sites in a silicon lattice to form two regions of germanium interposed between a region where dopant is to be introduced and a region from which dopant is to be excluded, the two germanium regions acting as a dopant diffusion barrier.

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