Application of electronic properties of germanium to inhibit n-t

Details Application of electronic properties of germanium to inhibit n-t Application of electronic properties of germanium to inhibit n-t

1991-07-31

1994-01-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

257616, 257610, 257611, 257612, H01L 31117, H01L 29167, H01L 29207, H01L 29227

Patent

active

052801853

ABSTRACT:
A structure of inhibiting dopant diffusion in silicon using germanium is provided. Germanium is distributed in substitutional sites in a silicon lattice to form two regions of germanium interposed between a region where dopant is to be introduced and a region from which dopant is to be excluded, the two germanium regions acting as a dopant diffusion barrier.

REFERENCES:
patent: 5095358 (1992-03-01), Aronowitz et al.
"Germanium Implantation Into Silicon: An Alternate Pre-Amorphization/Rapid Thermal Annealing Procedure for Shallow Juction Technology" by Sadana et al., Mat. Res. Soc. Symp. Proc. vol. 23 (1984), pp. 303-308.

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