Application of electronic properties of germanium to inhibit n-t

Details Application of electronic properties of germanium to inhibit n-t Application of electronic properties of germanium to inhibit n-t

1992-09-03

1994-03-29

Thomas, Tom

Fishing, trapping, and vermin destroying

437154, 437959, 437976, H01L 21265

Patent

active

052984354

ABSTRACT:
A method of inhibiting dopant diffusion in silicon using germanium is provided. Germanium is distributed in substitutional sites in a silicon lattice to form two regions of germanium interposed between a region where dopant is to be introduced and a region from which dopant is to be excluded, the two germanium regions acting as a dopant diffusion barrier.

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patent: 4603471 (1986-08-01), Strain
patent: 4728619 (1988-03-01), Pfiester et al.
patent: 4835112 (1989-05-01), Pfiester et al.

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