Application of e-beam proximity over-correction to compensate op

Details Application of e-beam proximity over-correction to compensate op Application of e-beam proximity over-correction to compensate op

1999-03-18

2000-04-18

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430296, 430942, G03C 500

Patent

active

060513470

ABSTRACT:
A method of correcting, or compensating for errors encountered in the transfer of patterns is disclosed for use with high resolution e-beam lithography. In a first embodiment, optical proximity effects are incorporated into the e-beam proximity effects by superimposing the two effects to arrive at a compensated dosage level database to produce the desired patterns. In a second embodiment, etching effects are also superimposed on the previous driving database by compensating the e-beam proximity data twice, that is, by over correcting it, to further improve the transfer of patterns without the undesirable effects. It is shown that corrections for a number of other process steps can also be incorporated into the database that drives the e-beam lithography machine in order to achieve high resolution patterns of about one-quarter-micron technology.

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Wolf et al., "Silicon Processing for the VLSI Era", vol. 1: Process Technology, Lattice Press, Sunset Beach, CA, 1986, p. 500.

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