Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2008-07-22
2008-07-22
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S3960ML, C250S492100, C250S492200, C250S492300, C327S156000, C327S159000, C327S162000, C331S00100A, C331S025000, C375S344000, C375S376000
Reexamination Certificate
active
07402821
ABSTRACT:
An improved HE LINAC-based ion implantation system is disclosed utilizing direct digital synthesis (DDS) techniques to obtain precise frequency and phase control and automated electrode voltage phase calibration. The DDS controller may be used on a multi-stage linear accelerator based implanter to digitally synchronize the frequency and phase of the electric fields to each electrode within each stage of the accelerator. The DDS controller includes digital phase synthesis (DPS) circuits for modulating the phase of the electric field to the electrodes, and a master oscillator that uses digital frequency synthesis or DFS to digitally synthesize a master frequency and phase applied to each of the DPS circuits. Also disclosed are methods for automatically phase and amplitude calibrating the RF electrode voltages of the stages.
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Axcelis Technologies Inc.
Eschweiler & Associates LLC
Souw Bernard
Wells Nikita
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