Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2005-04-19
2005-04-19
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S749000, C257S753000, C257S783000
Reexamination Certificate
active
06882036
ABSTRACT:
Methods and apparatuses for forming thin microelectronic dies. A method in accordance with one embodiment of the invention includes releasably attaching a microelectronic substrate to a support member with an attachment device. The microelectronic substrate can have a first surface, a second surface facing opposite from the first surface, and a first thickness between the first and second surfaces. The attachment device can have a releasable bond with the microelectronic substrate, wherein the bond has a bond strength that is reduced upon exposure to at least one energy. The support member can be at least partially transmissive to the at least one energy. The method can further include reducing a thickness of the microelectronic substrate and directing a quantity of the at least one energy through the support member to the attachment device to reduce the strength of the bond between the attachment device and the microelectronic substrate. At least a portion of the microelectronic substrate can then be separated from the support member. The support member can accordingly provide releasable support to the microelectronic substrate while the thickness of the microelectronic substrate is reduced.
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Connell Michael E.
Draney Nathan R.
Perkins Coie LLP
Tran Thien F
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