Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1996-12-10
1998-10-20
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117201, 117202, 117900, C30B 3500
Patent
active
058241531
ABSTRACT:
An apparatus for holding a single-crystal semiconductor ingot which is stored in a pulling chamber of a single-crystal semiconductor pulling apparatus is disclosed. The apparatus includes a spindle; a base installed on the spindle and movable along the spindle; a pair of arms for holding the single-crystal semiconductor ingot; means for driving the arms; a pair of sensors for detecting the distance between the ingot and the arms; and a controller for driving the arms to the ingot according to the sensors; when each of the arms is detected to have a predetermined distance from the ingot, the controller stopping the movement of the arm; when both the arms have the predetermined distance to the ingot, the controller driving simultaneously both the arms to the ingot surface, thereby holding the ingot.
REFERENCES:
patent: 5089239 (1992-02-01), Mizuishi et al.
patent: 5104689 (1992-04-01), Hayden et al.
patent: 5135727 (1992-08-01), Ibe
Hiraishi Yoshinobu
Shimomura Koichi
Suda Ayumi
Garrett Felisa
Komatsu Electronic Metals Co., Ltd
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