Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-12-29
2008-10-21
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S185210, C365S185230
Reexamination Certificate
active
07440324
ABSTRACT:
Shifts in the apparent charge stored on a floating gate (or other charge storage element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other charge storing elements). To account for this coupling, the read process for a targeted memory cell will provide compensation to an adjacent memory cell (or other memory cell) in order to reduce the coupling effect that the adjacent memory cell has on the targeted memory cell. The compensation applied is based on a condition of the adjacent memory cell. To apply the correct compensation, the read process will at least partially intermix read operations for the adjacent memory cell with read operations for the targeted memory cell.
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Lam David
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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