Apparatus utilizing light emitting semiconductor device

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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377102, H01J 3150

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active

051110342

ABSTRACT:
Disclosed is an apparatus utilizing a light emitting semiconductor device which has a pumped region and an unpumped absorber region and in which an active layer has a quantum well structure.
In this light emitting semiconductor device, driving current/light output characteristics have dependence on the pulse width of a driving current. A logic unit or a noise reducing apparatus is realized utilizing this property.
Furthermore, in the above described light emitting semiconductor device, the central wavelength of emitted light has dependence on a driving current or dependence on driving time. A light beam scanner can be realized utilizing this property.

REFERENCES:
patent: 4751378 (1988-06-01), Hinton et al.
patent: 4904858 (1990-02-01), La Marche
patent: 4904859 (1990-02-01), Goossen et al.
patent: 4952028 (1990-08-01), Tashiro
T. Takagi, H. Imamoto, F. Sato and M. Shimura "Quantum Well Laser Diode With Non Injection Region" 1989 Autumn Dai 50 Kai Ouyou Butsuri Gakkai (JSAP) Gakujutsu Kouenkai Kouen Yokoushu, 28 p.-ZL-14, Sep. 27-30, 1989.

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