Apparatus, system, and method for multiple-segment floating...

Details Apparatus, system, and method for multiple-segment floating... Apparatus, system, and method for multiple-segment floating...

2006-12-28

2010-10-26

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S314000, C257S315000, C257SE21179, C257SE21680, C257SE29300, C438S201000, C438S211000, C438S257000

Reexamination Certificate

active

07821045

ABSTRACT:
Various embodiments include a substrate and a memory cell coupled to the substrate. The memory cell may include an L-shaped floating gate, a control gate, an insulation layer coupled between the control gate and the first L-shaped floating gate, and a conductive layer coupled between the substrate and the first L-shape floating gate. Other embodiments including additional apparatus, systems, and methods are disclosed.

REFERENCES:
patent: 7489010 (2009-02-01), Takeuchi
patent: 7494860 (2009-02-01), Mokhlesi

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