Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1998-02-14
1999-01-12
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118730, C23C 1600
Patent
active
058581022
ABSTRACT:
A chemical vapor deposition apparatus for depositing at least one layer of material with controlled substrate-to-substrate variation onto a plurality of substrates is disclosed, comprising a reactor including at least one gas inlet (40) and one gas outlet (60), a planetary susceptor rotation means (14) containing a plurality of secondary susceptors (114) for supporting and heating the substrates (110), and a heating means (50) for heating the secondary susceptors.
REFERENCES:
patent: 3424628 (1969-01-01), Winings et al.
patent: 3652444 (1972-03-01), Lester et al.
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4629532 (1986-12-01), Yanase et al.
patent: 4705700 (1987-11-01), Ikeda et al.
patent: 4860687 (1989-08-01), Frijlink
patent: 4961399 (1990-10-01), Frijlink
patent: 4976996 (1990-12-01), Monkowski et al.
patent: 5091219 (1992-02-01), Monkowski et al.
patent: 5173336 (1992-12-01), Kennedy
patent: 5455069 (1995-10-01), Lee
patent: 5455070 (1995-10-01), Anderson et al.
patent: 5468299 (1995-11-01), Tsai
P.M. Frijlink et al., "Layer uniformity in a multiwafer MOVPE reactor for III-V compounds," 1991, Journal of Crystal Growth vol. 107, pp. 166-174.
S.M. Sze, "Semiconductor Devices--Physics and Technology," 1985, pp. 321-329.
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