Apparatus, methods and articles of manufacture for power...

Details Apparatus, methods and articles of manufacture for power... Apparatus, methods and articles of manufacture for power...

2006-05-23

2006-05-23

Choe, Henry (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including d.c. feedback bias control for stabilization

C330S285000

Reexamination Certificate

active

07049893

ABSTRACT:
An apparatus and method for amplifying a radiofrequency (RF) signal. The apparatus comprises a control circuit including a first transistor, a second transistor, and a ballast resistor coupled between an emitter terminal of the first transistor and a base terminal of the second transistor, such that a control voltage applied to a base terminal of the first transistor controls the amplification of a signal applied to the base terminal of the second transistor. Additional elements may be coupled to the control circuit to improve the performance thereof, including a feedback stabilization circuit, a diode stack circuit, a bypass capacitor and an additional resistor.

REFERENCES:
patent: 5629648 (1997-05-01), Pratt
patent: 6052032 (2000-04-01), Jarvinen
patent: 6313705 (2001-11-01), Dening et al.
patent: 6549076 (2003-04-01), Kuriyama
patent: 6882227 (2005-04-01), Barry et al.
patent: 2002/0063601 (2002-05-01), Yamamoto et al.
patent: 2002/0097097 (2002-07-01), Sugiura
Noh Y S et al “Linearized InGaP/GaAs HBT MMIC power amplifier with active bias circuit” IEEE Radio and Wireless Conference Rawcon 2001, Aug. 19, 2001 pp. 249-252, XP010555678 Waltham, MA, USA.

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