Apparatus, method and program for ion implantation...

Details Apparatus, method and program for ion implantation... Apparatus, method and program for ion implantation...

2006-07-25

2006-07-25

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492300

Reexamination Certificate

active

07081633

ABSTRACT:
An ion implantation simulator that computes an ion density distribution at high speed and with high accuracy based on a beam dispersion phenomenon in an ion implantation process. The ion implantation simulator is provided with the beam dispersion approximate function storage section121, which stores a beam dispersion approximate function that is obtained through approximation of ion beam dispersion by using a predetermined function; a beam intensity computing section131, which computes an area surface beam intensity that indicates an intensity of the ion beam on a surface of an implanted area by using the beam dispersion approximate function; and an ion density distribution computing section132, which computes the density distribution of the ion, which is implanted by the ion beam into the device through the surface of the implanted area, by using the area surface beam intensity.

REFERENCES:
patent: 6878595 (2005-04-01), Spratt
patent: 2002/0087298 (2002-07-01), Ito et al.
patent: 2004/0002202 (2004-01-01), Horsky et al.
patent: 2000-340518 (2000-12-01), None

Affiliated with

Also associated with

Rating

Apparatus, method and program for ion implantation... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus, method and program for ion implantation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus, method and program for ion implantation... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3572803