Apparatus involving pulsed electron beam processing of semicondu

Details Apparatus involving pulsed electron beam processing of semicondu Apparatus involving pulsed electron beam processing of semicondu

1977-04-27

1978-04-04

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250492A, H01J 3730

Patent

active

040829588

ABSTRACT:
A pulsed electron beam generator produces a short duration pulse of electrons in the form of a directed beam for thermal processing of a semiconductor device, which is positioned in a pulsed electron beam chamber so that the propagating electron beam impacts upon the device surface in selected regions of the device that are to be processed. Energy deposited by the impacting electron pulse momentarily elevates the temperature of the selected regions above threshold processing temperatures for rapid, effective annealing, sintering or other thermal processing. The characteristics of the electron beam pulse are such that only those surface vicinity regions to be processed are elevated to a high temperature, the remaining mass of the semiconductor device not being subjected to unnecessary or undesirable high temperature exposure.

REFERENCES:
patent: 2906679 (1959-09-01), Lawton
patent: 3066238 (1962-11-01), Arndt
patent: 3144552 (1964-08-01), Schonberg
patent: 3406304 (1968-10-01), Brewster
patent: 3922546 (1975-11-01), Livesay

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