Apparatus including resonant-tunneling device having multiple-pe

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357 4, 357 12, 357 16, H01L 29205, H01L 2988

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049029126

ABSTRACT:
A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure.

REFERENCES:
patent: 3053998 (1962-09-01), Chynoweth et al.
patent: 4581621 (1986-04-01), Reed
"Resonant Tunneling Through Double Barrier Perpendicular Quantum Transport Phenomena in Supperlattices, and Their Device Application", IEEE Journal of Quantum Electronics, vol. QE-22, 1986, pp. 1853-1869, by F. Capasso et al.
"Millimeter-Band Oscillations Based on Resonant Tunneling in a Double-Barrier Diode at Room Temperature", Applied Physics Letters, vol. 50, 1987, pp. 83-85, by E. R. Brown et al.
"New Resonant Tunneling Diode With a Deep Quantum Well", Japanese Journal of Applied Physics, vol. 25, 1986, pp. L786-L788, by H. Toyoshima et al.
"Observation of a Negative Differential Resistance Due to Tunneling Through a Single Barrier into a Quantum Well", Applied Physics Letters, vol. 49, 1986, pp. 70-72, by H. Morkoc et al.
"Resonant Tunneling Transistor With Quantum Well Base and High-Energy Injection: A New Negative Differential Resistance Device", Journal of Applied Physics, vol. 58, 1985, pp. 1366-1368, by F. Capasso et al.
"A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)", Japanese Journal of Applied Physics, vol. 24, 1985, pp. L853-L854, by N. Yokoyama et al.
"Quantum-Well Resonant Tunneling Bipolar Transistor Operating at Room Temperature", IEEE Electron Device Letters, vol. EDL-7, 1986, pp. 573-575, by F. Capasso et al.
"A Resonant-Tunneling Bipolar Transistor (RBT): A Proposal and Demonstration for New Functional Devices With High Current Gains", Technical Digest of the 1986 International Electron Devices Meeting, pp. 286-289, by T. Futatsugi et al.
"Tunneling Transfer Field-Effect Transistor: A Negative Transconductance Device", Applied Physics Letters, vol. 50, 1987, pp. 410-412, by B. Vinter et al.
"Inverted Base-Collector Tunnel Transistors", Applied Physics Letters, vol. 47, 1985, pp. 888-890, by A. R. Bonnefoi et al.
"Resonant Tunneling of Two-Dimensional Electrons Through a Quantum Wire: A Negative Transconductance Device", Applied Physics Letters, vol. 47, 1985, pp. 1347-1693, by S. Luryi et al.
"Charge Injection Transistor Based on Real-Space Hot-Electron Transfer", IEEE Transactions on Electron Devices, vol. ED-31, 1984, pp. 832-839, by S. Luryi et al.
"An All-CMOS Ternary Identity Cell for VLSI Implementation", Electronics Letters, vol. 20, 1984, pp. 221-222, by A. Hueng et al.
"Experimental Realization of a Resonant Tunneling Transistor", Applied Physics Letters, vol. 50, 1987, pp. 451-453, by T. K. Woodward et al.

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