Apparatus including effectively intrinsic semiconductor for conv

Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system

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136 89SG, 250338, G01T 122

Patent

active

041525973

ABSTRACT:
Radiant energy is converted into electric energy by irradiating a capacitor including a layer of an intrinsic or lightly doped semiconductor, having a face on which an insulating layer is provided. First and second metallic contacts are respectively provided on the insulating layer and semiconductor. The radiant energy cyclically irradiates an interface of the semiconductor and the insulating layer to produce electron hole pairs in the interface surface of the semiconductor and thereby cause cyclic changes in the capacitance and resistance of the capacitor. The capacitor is initially charged to a voltage just below the breakdown voltage of the insulating and semiconductor layers by temporarily connecting it across a DC source to cause a current to flow through a charging resistor to the capacitor. The device can be utilized as a radiant energy detector, as well as a solar energy cell.

REFERENCES:
patent: 3450879 (1969-06-01), Seppi
patent: 3851174 (1974-11-01), Tynan et al.
patent: 3932753 (1976-01-01), Stotlar
patent: 3949210 (1976-04-01), Eichinger et al.
patent: 3985685 (1976-10-01), Houlton et al.

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