Apparatus including compensation mask to correct particle beam p

Optics: measuring and testing – By alignment in lateral direction

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355 53, 355 72, G01B 1100

Patent

active

059867655

ABSTRACT:
Methods and apparatus for accurately performing proximity-effect compensation exposure are disclosed, even in cases where negative-type particle-beam-sensitive resist material is used. On a compensation mask, regions corresponding to regions on an underlying wafer that are to receive die patterns are subdivided into a multiple subfields having a pitch smaller than the spread width of particles back-scattered from the wafer 7. Certain of the subfields on the compensation mask define an aperture allowing passage therethrough of a particle beam. The aperture sizes are not uniform. Rather, each aperture is equal in area to an area of the nominally unexposed regions of the subfield less a prescribed constant area. The particle beam, after passing through a beam-shaping aperture, irradiates the compensation mask via an objective lens, and is scanned across the compensation mask by deflectors.

REFERENCES:
patent: 5254438 (1993-10-01), Owen et al.
patent: 5316879 (1994-05-01), Berger et al.

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