Apparatus improvements for growing single crystalline silicon sh

Chemistry: physical processes – Physical processes – Crystallization

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156608, 156DIG83, 156DIG88, 156617SP, 423325, 423285, 427 93, 427237, C01B 3500, B01J 1718

Patent

active

040999246

ABSTRACT:
Mechanical components such as dies and crucibles, which come in contact with a silicon melt during the formation of single crystalline shaped silicon particles, e.g. thin sheets or ribbons, are coated with silicon oxynitride deposited by chemical vapor deposition techniques.

REFERENCES:
patent: 2968530 (1961-01-01), Forgeng
patent: 3226194 (1965-12-01), Kuntz
patent: 3453352 (1969-07-01), Goundry
patent: 3650703 (1972-03-01), Labelle
Croft, Rev. of Ceramic Technology, #26, Feb. 1974, pp. 1-12.
Guzman, Translation from Ogneuoxy, #3, (pp. 41-46), Mar. 1970, pp. 177-182.
Ackermann, IBM Tech. Discl. Bulle, vol. 15, #12, May 1973, p. 3888.

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