Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2006-05-23
2006-05-23
Heinz, A. J. (Department: 2653)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
07050277
ABSTRACT:
A method and apparatus for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. The head includes a self-pinned layer, the self-pinned layer having a first end, a second end and central portion, a free layer disposed over the central portion of the self-pinned layer in a central region and a first and second hard bias layers formed over the first and second ends of the self-pinned layer respectively, the first and second hard bias layer abutting the free layer, the first and second end of the self-pinned layer extending under the hard bias layers at the first and second ends.
REFERENCES:
patent: 5018037 (1991-05-01), Krounbi et al.
patent: 5583725 (1996-12-01), Coffey et al.
patent: 6146776 (2000-11-01), Fukuzawa et al.
patent: 6252750 (2001-06-01), Gill
patent: 6266218 (2001-07-01), Carey et al.
patent: 6324037 (2001-11-01), Zhu et al.
patent: 6344953 (2002-02-01), Kautzky et al.
patent: 6348274 (2002-02-01), Kamiguchi et al.
patent: 6385017 (2002-05-01), Min et al.
patent: 6433972 (2002-08-01), Mao et al.
patent: 2001/0004798 (2001-06-01), Gill
patent: 2001/0026425 (2001-10-01), Miyazawa et al.
patent: 2002/0024780 (2002-02-01), Mao et al.
patent: 2002/0085323 (2002-07-01), Smith et al.
patent: 2002/0149889 (2002-10-01), Gill
patent: 2002/0154455 (2002-10-01), Lenssen
patent: 2002/0154456 (2002-10-01), Carey et al.
patent: 2002/0154457 (2002-10-01), Horng et al.
patent: 2005/0024793 (2005-02-01), Nakabayashi et al.
patent: 11045415 (1999-02-01), None
Takahashi, M., Maeda, T., Inage, K., Sakai, M., Morita, H., and Matsuzaki, M., “EDS Induced Pinned Layer Reversal in Spin-Valve GMR Heads,”IEEE Transactions on Magnetics, vol. 34, No. 4., Jul. 1998.
Hung, Silas T., Wong, C.Y., Osborn, Mark, Kagaoan, Joel, Zhang, L.Z., and Bordeos, Randy, “A Study of GMR Read Sensor Induced by Soft EDS Using Magnetoresistive Sensitivity Mapping (MSM)”, unknown.
Liao, C.C.; Ho, C.H.; Huang, R. -T.; Chen, F.-R.; Kai, J.J.; Chen, L.-C.; Lin, M.-T., and Yao, Y.D., “Thermal Stability Study of the Insulator Layer in NiFe/CoFe/Al2O3/Co Spin-Dependent Tunnel Junction,”Journal of Magnetism and Magnetic Materials, vol. 239, No. 1-3, pp. 116-119, Feb. 2002.
Cardoso, S.; Freitas, P.P.; de Jesus, C.; and Soares, J.C., “High Thermal Stability Tunnel Junctions,”Journal of Applied Physics, vol. 87, No. 9, pp. 6056-6060, May 2000.
Cardoso, S.; Freitas, P.P.; Zhang, Z.G.; Wei, P.; Barradas, N.; and Soares, J.C., “Electrode Roughness and Interfacial Mixing Effects on the Tunnel Junction Thermal Stability,”Journal of Applied Physics, vol. 89, No. 11, pp. 6650-6652, Jun. 2001.
Gill Hardayal Singh
Hsiao Wen-Chien
Luo Jih-Shiuan
Chambliss Bahner & Stophel P.C.
Heinz A. J.
Hitachi Global Storage Technologies - Netherlands B.V.
Lynch David W.
LandOfFree
Apparatus having a self-pinned abutted junction magnetic... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus having a self-pinned abutted junction magnetic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus having a self-pinned abutted junction magnetic... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3633844