Apparatus for zone melting recrystallization of thin semiconduct

Details Apparatus for zone melting recrystallization of thin semiconduct Apparatus for zone melting recrystallization of thin semiconduct

1992-05-08

1994-04-19

Kunemund, Robert

Chemical apparatus and process disinfecting, deodorizing, preser

Physical type apparatus

Crystallizer

437174, 437247, 437173, 148512, 148525, 148DIG90, 1566207, 15662072, 118 501, 118620, H01L 21268

Patent

active

053043570

ABSTRACT:
An apparatus for zone melting a thin semiconductor film comprises an first laser for heating the thin semiconductor film, at least one additional laser for heating an insulating substrate, a first temperature detecting device for detecting the temperature of a melted portion of the thin semiconductor film, and a second temperature detecting device for detecting the temperature of a solidified portion of the thin semiconductor film. The apparatus further comprises a first controller for controlling an output of the first laser so as to maintain the temperature of the melted portion in a first predetermined temperature range, and a second controller for controlling an output of the additional laser so as to maintain the temperature of the solidified portion in a second predetermined temperature range.

REFERENCES:
patent: 4177372 (1979-12-01), Kotera et al.
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4375993 (1983-03-01), Mori et al.
patent: 4589951 (1986-05-01), Kawamura
patent: 4685976 (1987-08-01), Schachameyer et al.
patent: 4915772 (1990-04-01), Fehlmer et al.
patent: 5122223 (1992-06-01), Geis et al.

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