Apparatus for wiring semiconductor device using energy beam and

Details Apparatus for wiring semiconductor device using energy beam and Apparatus for wiring semiconductor device using energy beam and

1991-06-28

1992-09-22

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504923, H01J 37317

Patent

active

051499738

ABSTRACT:
Disclosed are an apparatus for wiring a semiconductor device and a wiring method therefor which allow a manufacturing step to be simplified without deteriorating an insulation characteristic of an aerial wiring. The semiconductor device wiring apparatus includes a first beam column 1a disposed above a substrate 50 and a second beam column 1b disposed horizontally thereto. Therefore, a wiring portion of the aerial wiring to be formed upwardly is formed by using the first beam column 1a and a wiring portion to be formed horizontally to wiring layer of the substrate 50 is formed by using the second beam column, which results in that no insulating film for the aerial wiring is required to simplify manufacturing steps.

REFERENCES:
patent: 4457803 (1984-03-01), Takigawa
patent: 4609809 (1986-02-01), Yamaguchi et al.
patent: 4874947 (1989-10-01), Ward et al.
M. Yamamoto et al., "Submicron Mask Repair Using Focused Ion Beam Technology", SPIE vol. 632, Electron Beam, X-Ray & Ion-Beam Techniques for Submicrometer Lithographies V (1986), pp. 97-103.

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