Apparatus for vaporizing monomers that flow at room temperature

Coating apparatus – Gas or vapor deposition

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Details

118724, 118726, 122366, 219274, C23C 1600

Patent

active

049477897

ABSTRACT:
An evaporator chamber has an entry end with a conduit connected to the output of a mass flow regulator, an exit end connected to a vacuum, and a wall surface extending therebetween. A body having capillary action is disposed in the chamber and has one end connected to the conduit and a free surface spaced from the wall surface in line of sight thereof. Heating means for the wall surface heats the body radiantly and causes monomer carried thereby to evaporate.

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patent: 3607368 (1971-09-01), Van Amstel
patent: 3723706 (1973-03-01), Van Amstel
patent: 3875926 (1975-04-01), Frank
patent: 4748314 (1988-05-01), Desage
Chin, B. L. and E. P. van de Ven, "Plasma TEOS Process for Interlayer Dielectric Applications", Solid State Technology (Apr. 1988) pp. 119-122.
Mukherjee, S. P. and P. E. Evans, "The Deposition of Thin Films by the Decomposition of Tetraethoxysilane in a Radio Frequency Glow Discharge", Thin Solid Films (1972) pp. 105-118.
Mackens, U. and U. Merkt, "Plasma-Enhanced Chemically Vapour-Deposited Silicon Dioxide for Metal/Oxide Semiconductor Structure on InSb", Thin Solid Films (1982) pp. 53-61.
Howard, R. E., "Selecting Semiconductor Dopants for Precise Process Control, Product Quality and Yield and Safety", Microelectronic Manufacturing and Testing, (Dec. 1985) pp. 20-24.

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