Apparatus for vapor sheathed baking of semiconductor wafers

Details Apparatus for vapor sheathed baking of semiconductor wafers Apparatus for vapor sheathed baking of semiconductor wafers

1983-05-23

1985-12-03

Mayewsky, Volodymyr Y.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219388, 219400, 219462, 219530, 126 21A, 432121, H05B 368

Patent

active

045567859

ABSTRACT:
In the heat treating apparatus disclosed herein, semiconductor wafers are baked on the circular hot plate while being sheathed with a uniform vapor flow. The preferred vapor is a mixture of a relatively large volume of nitrogen carrying a relatively small volume of HMDS. After passing over the wafer, the vapor sheath is drawn, through an annular gap, into an exhaust chamber which surrounds and underlies the hot plate thereby avoiding heat and vapor loss into the other portions of the semiconductor fabrication line within which the baking apparatus is typically incorporated.

REFERENCES:
patent: 4273981 (1981-06-01), Nopper
patent: 4321031 (1982-03-01), Woodgate
patent: 4436985 (1984-03-01), Weber
patent: 4518848 (1985-05-01), Weber
Boomhower et al., IBM Technical Disclosure Bulletin, "Heated Base Airtrack Tool System for Heated Media or Reactive Wafer Transport/Processing", pp. 2944-2948, vol. 19, No. 8, Jan. 1977.

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