Apparatus for vapor phase epitaxial growth

Details Apparatus for vapor phase epitaxial growth Apparatus for vapor phase epitaxial growth

1989-07-13

1991-06-04

Morgenstern, Norman

Coating apparatus

Gas or vapor deposition

With treating means

118728, 156607, 156612, C23C 1646

Patent

active

050204742

ABSTRACT:
An apparatus for vapor phase epitaxial growth comprises a reactor tube, a raw material gas supplying device for supplying a raw material gas or gas mixture for thin film formation into the reactor tube, a liquid tank disposed within the reactor tube, a melt stored in the liquid tank, and a heater for heating the melt. The reverse side of a substrate is kept in contact with the melt. The substrate is heated to a desired temperature by heat conduction from the melt.

REFERENCES:
patent: 3294661 (1966-12-01), Maissel
patent: 3845738 (1974-11-01), Berkman et al.
patent: 4331707 (1982-05-01), Muruska et al.
patent: 4778559 (1988-10-01), McNeilly
patent: 4811687 (1989-03-01), Prince

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