Apparatus for vapor deposition

Details Apparatus for vapor deposition Apparatus for vapor deposition

1985-11-15

1987-03-24

Pianalto, Bernard D.

Coating apparatus

Gas or vapor deposition

Work support

118620, C23C 1600

Patent

active

046516743

ABSTRACT:
A method and apparatus for depositing a film on a wafer type substrate by vapor deposition. A planar, plate-like susceptor is positioned in a reaction chamber at an angle which is inclined with respect to the horizontal. The wafer is heated to a deposition temperature by means of a radio frequency induction coil which is positioned in close proximity to the susceptor, on the opposite side thereof. A gas inlet means is provided to introduce a decomposable compound of the film to be deposited. The gas inlet means is preferably angularly adjustable relative to the susceptor and is also rotatable on its own axis. Large diameter wafers can be effectively processed with this system in a compact apparatus.

REFERENCES:
patent: 3796182 (1974-03-01), Rosler
patent: 3980854 (1976-09-01), Berkman et al.
patent: 4394401 (1983-07-01), Shioya et al.
patent: 4468283 (1984-08-01), Ahmed

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