Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1997-11-25
1999-08-10
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117208, 117911, C30B 3500
Patent
active
059353287
ABSTRACT:
An apparatus for pulling a monocrystalline ingot from a semiconductor source material located within a growth chamber as the ingot is grown on a seed crystal according to the Czochralski method. The apparatus comprises a drum, a chuck constructed for holding the seed crystal and the ingot, and a cable having a first end connected to the drum, a second end connected to the chuck and a portion wound around the drum. The portion of the cable wound around the drum exerts a normal force on a circumferential surface of the drum corresponding to the tension in the cable. The drum and cable interact to produce a friction force resisting sliding movement of the cable relative to the drum in a direction lengthwise of the cable. The drum is capable of unwinding cable from the drum thereby to let out the cable and lower the chuck, and capable of winding the cable around the drum thereby to reel in the cable and draw the chuck upwardly. The chuck has a mass selected to exert a pre-tension on the cable prior to growing the ingot such that the increase in the friction on the portion of the cable wound around the drum as the cable is reeled in to pull the ingot from the source material is at least equal to the increase of the weight of the ingot as it grows on the seed crystal from the molten source material.
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Cherko Carl F.
Korb Harold
Schrenker Richard G.
Williams Dick S.
Hiteshew Felisa
MEMC Electronic Materials , Inc.
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