Apparatus for treatment with gas plasma

Details Apparatus for treatment with gas plasma Apparatus for treatment with gas plasma

1978-06-28

1981-01-13

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Optical or pre-photocell system

250551, G02B 514

Patent

active

042451540

ABSTRACT:
An improved apparatus for plasma treatment of silicon semiconductor wafers is proposed in which the end point of the plasma etching or ashing can be readily detected by monitoring with an optical fiberscope penetrating the wall of the plasma reaction chamber with one terminal located inside the plasma reaction chamber with a condenser lens attached thereto and the other terminal located outside the plasma reaction chamber at a distanced position free from the influence of the high frequency electric field inherent to plasma generation which otherwise interferes with the photoelectric recording by the photocell connected to the outer terminal of the optical fiberscope.

REFERENCES:
patent: 2987960 (1961-06-01), Sheldon
patent: 3629590 (1971-12-01), Case
patent: 3990778 (1976-11-01), Magee et al.
patent: 4011017 (1977-03-01), Feurstein et al.
patent: 4069838 (1978-01-01), Hansel et al.

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