Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-07-15
1999-04-06
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257236, 257245, 257246, H01L 27148, H01L 29768
Patent
active
058922512
ABSTRACT:
A charge transferring apparatus comprising, e.g., a buried type charge coupled device in which a pair of transfer electrodes located at the most downstream point of a charge transfer direction is driven by a drive pulse other than that for any other pair of transfer electrodes and a potential well formed at the pair of the transfer electrodes located at the most downstream point is made shallower than that at any other pair of transfer electrodes allowing the output dynamic range of a charge transfer device to be increased for improving the output quality.
REFERENCES:
patent: 4603426 (1986-07-01), Sauer
patent: 4873562 (1989-10-01), Cazanx et al.
Kumesawa Tetsuro
Matsui Hiromichi
Kananen Ronald P.
Ngo Ngan V.
Sony Corporation
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