Heat exchange – Structural installation – Heating and cooling
Patent
1982-01-29
1985-04-23
Hart, Douglas
Heat exchange
Structural installation
Heating and cooling
118 69, 118725, 165 80C, 16510432, 165126, F28F 700, F28D 1500
Patent
active
045123918
ABSTRACT:
An apparatus for the uniform thermal treatment of semiconductor wafers by gas conduction holds the wafer in place over a gas filled cavity in opposition to a thermal mass maintained at an appropriate temperature. Gas is introduced behind the semiconductor wafer adjacent its periphery to produce a near-constant gas pressure across the backside of the wafer. The constant pressure produces constant thermal conductivity. Consequently, heat conduction is uniform, the temperature of the wafer is uniform and uniform processing is accomplished across the wafer.
REFERENCES:
patent: 3062507 (1972-11-01), Andrus
patent: 3190262 (1965-06-01), Bakish et al.
patent: 3421331 (1969-01-01), Higa
patent: 3430455 (1969-03-01), Stuart et al.
patent: 3525229 (1970-08-01), Denhoy
patent: 3566960 (1971-03-01), Stuart
patent: 3717201 (1973-02-01), Hosmer
patent: 3717439 (1973-02-01), Sakai
patent: 3785853 (1974-01-01), Kirkman et al.
patent: 3854443 (1974-12-01), Baerg
patent: 3993123 (1976-11-01), Chu et al.
patent: 4063974 (1977-12-01), Fraas
patent: 4261762 (1981-04-01), King
patent: 4282924 (1981-09-01), Faretra
patent: 4306731 (1981-12-01), Shaw
M. King, et al., "Experiments on Gas Cooling of Wafers", Proceedings Third International Conference on Ion Implantation Equipment and Techniques, Queens University, Kingston, Ontario (May, 1980), Published in Nuclear Instruments and Methods 189 (1981), pp. 169-173, North-Holland Pub. Co.
L. D. Bollinger, "Ion Milling for Semiconductor Production Processes", Solid State Technology, Nov. 1977, pp. 66-70.
S. Dushman et al., "Thermal Conductivity at Low Pressures", Scientific Foundations of Vacuum Technique, pp. 43-53, (1962).
Cole Stanley Z.
Hart Douglas
Reitz Norman E.
Varian Associates Inc.
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