Apparatus for the treatment of wafer materials by plasma reactio

Details Apparatus for the treatment of wafer materials by plasma reactio Apparatus for the treatment of wafer materials by plasma reactio

1978-06-16

1979-04-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 156646, 204298, 250531, H01L 21306, C23F 100

Patent

active

041499239

ABSTRACT:
An automatic apparatus for the treatment of wafer materials by plasma reaction is proposed in which the wafers are sent into the plasma reaction chamber one by one and yet the atmospheric air is never introduced into the reaction chamber between the successive reaction steps for two wafers by use of two rotary vacuum valves which also serve as wafer transmitters into and out of the reaction chamber and a rotary wafer table inside the reaction chamber, all being installed on an inclined base table to effect the downward spontaneous movement of the wafer under treatment by gravity.

REFERENCES:
patent: 3875068 (1975-04-01), Mitzel
patent: 4094722 (1978-06-01), Yamamoto

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