Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state
Patent
1992-12-14
1995-03-07
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
For crystallization from liquid or supercritical state
117 13, 117 19, 117201, C30B 1316
Patent
active
053948289
ABSTRACT:
An apparatus for use in solidification of a doped electrically conducting material and for use in monitoring said solidification is provided. The apparatus includes a first forming means for forming a liquid of undoped material in thermodynamic equilibrium with a solid of the undoped material, and a second forming means for forming a liquid of doped material in thermodynamic equilibrium with a solid of the doped material. Solidification of the conducting material occurs at a solidification interface between the doped liquid and the doped solid in the second forming means. In one preferred embodiment, the apparatus comprises a conductive bridge for short-circuiting the liquids.
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Comera Jean
Favier Jean-Jacques
Rouzaud Andre
Breneman R. Bruce
Centre National d'Etudes Spatiales
Commissariat a l''Energie Atomique
Garrett Felisa
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