Apparatus for the production of silica crucible

Details Apparatus for the production of silica crucible Apparatus for the production of silica crucible

2009-08-28

2011-12-13

Gupta, Yogendra (Department: 1744)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

C117S208000

Reexamination Certificate

active

08075689

ABSTRACT:
In an apparatus for the production of a silica crucible comprising a carbon mold suitable for producing the silica crucible by the rotating mold method, the carbon mold has a thermal conductivity of not more than 125 W/(m·K).

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