Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1985-02-28
1986-11-04
Powell, William A.
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
156643, 156646, 204298, B44C 122, C03C 1500, C23F 102, H01L 21306
Patent
active
046208933
DESCRIPTION:
BRIEF SUMMARY
The present invention relates to an apparatus for the plasma treatment of disk-shaped substrates and in particular to an etching apparatus.
According to the present state of the art, a plasma treatment machine is known, which comprises a cathode in the form of a column, at the periphery of which the substrates to be treated can be arranged and around and at a distance from which a cylindrical container forming an anode and delimiting the reaction vessel can be arranged. In this machine, the reaction gas is introduced by means of pipes which extend in the space separating the central column forming an anode from the cylindrical cover and is discharged at one of the ends of this space. Because of this structure, the flow inside the reaction gas vessel is not uniform for all the substrates and this results, for certain applications, in insufficiently homogeneous treatment of each substrate and insufficiently homogeneous treatment of the substrates compared to each other. Moreover, loading and unloading of the substrates on/from the column forming a cathode is particularly complicated on account of the fact that the substrates must be loaded and unloaded in vertical rows.
A plasma treatment machine is also known, which comprises a ring forming a cathode on which the substrates to be treated can be arranged. Injection of the reaction gas is performed at the periphery of the ring whereas pumping is performed in the center of this ring. This machine has the disadvantage of occupying a large volume in relation to the number of substrates which can be treated and, taking into account the direction of flow of the reaction gas, the substrates are not treated in a sufficiently homogeneous manner.
Moreover, in the first machine as in the second machine, the plasma ignites over the entire surface of the substrates and also over the entire surface of the cathode. This results in a high consumption of electrical energy.
The present invention is aimed in particular at overcoming the drawbacks of the present state of the art and proposes a plasma treatment apparatus which ensures very good directivity, selectivity and homogeneity of treatment for each of the substrates and for the substrates compared to each other.
The apparatus, according to the present invention, for the plasma treatment of disk-shaped substrates comprises a reaction vessel which has supply means and discharge means for a reaction gas, at least one first electrode, forming an anode, which is provided in the said vessel and is designed to be connected to a reference potential and, located in the said vessel, at least one second electrode, forming a cathode, which is electrically insulated from the said first electrode and is designed to be connected to an alternating energy source and has a surface for receiving at least one substrate located on the same side as the said first electrode, so that a plasma can be formed between the said electrodes with a view to treating the substrate carried by the second electrode. The treatment apparatus according to the present invention is such that it comprises a plurality of cathodes, at the periphery of which are provided, in each case, gass flow spaces through which the reaction gas is able to flow, from the gas supply means located on the same side as the cathode surfaces for receiving the plates, to the gas discharge means located downstream of these flow spaces.
According to the present invention, the said cathodes may advantageously be, in each case, surrounded at a distance by parts which are electrically insulated from the cathodes and connected to the reference potential, the said flow spaces being provided between these parts and the peripheral walls of the corresponding cathodes.
The treatment apparatus according to the present invention may advantageously comprise at least one removable support which has a plurality of through passages formed so as to correspond to at least one part of the said cathodes and provided with means for holding, in each case, at least one substrate inside the said passages or op
REFERENCES:
patent: 4399016 (1983-08-01), Tsukada et al.
patent: 4473455 (1984-09-01), Dean et al.
Patents Abstracts of Japan, vol. 7, No. 171(C-178, 1316), Jul. 28, 1983, Jp. No. 58-77568(A), 5/10/1983, Hitachi Seisakusho K.K. (Hiraiwa).
Patents Abstracts of Japan, vol. 7, No. 53(C-154, 1198), 3/3/1983, Jp. No. 57-203779(A), 12/14/1982, Fujitsu K.K. (Maruyama).
Nextral
Powell William A.
LandOfFree
Apparatus for the plasma treatment of disk-shaped substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for the plasma treatment of disk-shaped substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for the plasma treatment of disk-shaped substrates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-695816