Apparatus for the manufacture of SOI wafer and process for prepa

Details Apparatus for the manufacture of SOI wafer and process for prepa Apparatus for the manufacture of SOI wafer and process for prepa

1996-08-27

1999-04-06

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

117 2, 117 3, 117 4, 117 9, 117 43, C30B 3500

Patent

active

058912444

ABSTRACT:
The present invention provides a process for preparing SOI wafer, more specifically, a process for preparing a large-sized SOI wafer of high quality of crystallization employing an apparatus for the manufacture of the SOI wafer in a simple and efficient manner. The apparatus for the manufacture of SOI wafer of the invention comprises electric furnace for heating polycrystalline silicon filled in a heat-resistant container; means for moving up and down of an insulating substrate whose one side is accompanied with silicon single crystalline seed, and immersing the substrate in the molten silicon filled in the heat-resistant container to form a thin single crystalline film on the substrate; and, shapers to keep a constant thickness of the thin single crystalline film which is formed on the insulating substrate by the moving means. Further, a process for preparing SOI wafer of the invention comprises the steps of: preparing a molten silicon by heating polycrystalline silicon; growing a thin single crystalline film by moving down one or more insulating substrate whose one side is accompanied with the silicon single crystalline seed to immerse the seed in the molten silicon, and moving up one or more insulating substrates to solidify the silicon deposited on the substrates; and, keeping a constant thickness of the thin single crystalline film which is formed on the insulating substrate employing a shaper.

REFERENCES:
patent: 4590130 (1986-05-01), Cline
patent: 5374564 (1994-12-01), Bruel
H.W. Lam,, Simox SOI for Integrated Circuit Fabrication, IEEE Circuits and Devices Magazine, 3(4):6-11 (1987).
J.C.C. Fan et al., Graphite-Strip-Heater Zone-Melting Recrystallization of Si Films, J. Crystal Growth 63:453-483(1983).
K. Shigematsu et al., Thermal Properties of Molten Bismuth Germanates, J. Crystal, 137: 509-515 (1994).
K. Kawano et al., Crystal Growth of Bi.sub.4 Ge.sub.3 O.sub.12 and Heat Transfer Analyses of Horizontal Bridgman Techniques, Jpn. J. Appl. Phys., 32:1736-1739 (1993).

Affiliated with

Also associated with

Rating

Apparatus for the manufacture of SOI wafer and process for prepa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for the manufacture of SOI wafer and process for prepa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for the manufacture of SOI wafer and process for prepa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1367606