Apparatus for the manufacture of epitaxial Ga.sub.1-x Al.sub.x A

Details Apparatus for the manufacture of epitaxial Ga.sub.1-x Al.sub.x A Apparatus for the manufacture of epitaxial Ga.sub.1-x Al.sub.x A

1979-10-12

1981-09-08

McIntosh, John P.

Coating apparatus

Immersion or work-confined pool type

Capillary passages or barometric column feed

118415, 118421, B05C 500

Patent

active

042878489

ABSTRACT:
Apparatus for manufacturing epitaxial Ga.sub.1-x Al.sub.x As:Si films via liquid-phase epitaxy, using a boat in a quartz tube. The Ga, which is contained in a graphite boat, open at the long side, is baked out first. The Ga-melt is allowed to run onto GaAs substrate wafers, on which Si is deposited, and to be drawn into the gap between the GaAs-substrate wafers and the plane graphite surfaces. The thin Ga-melt formed above the GaAs substrate wafers is then brought into contact with the melted Al and is allowed to cool.

REFERENCES:
patent: 3759759 (1973-09-01), Solomon
patent: 3762367 (1973-10-01), Nishizawa et al.
patent: 3933123 (1976-01-01), Andre

Affiliated with

Also associated with

Rating

Apparatus for the manufacture of epitaxial Ga.sub.1-x Al.sub.x A does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for the manufacture of epitaxial Ga.sub.1-x Al.sub.x A, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for the manufacture of epitaxial Ga.sub.1-x Al.sub.x A will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1187918