Apparatus for the localized reduction of the lifetime of charge

Details Apparatus for the localized reduction of the lifetime of charge Apparatus for the localized reduction of the lifetime of charge

1995-07-25

1999-05-04

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257148, 257156, 257394, 257547, 257590, H01L 2974

Patent

active

059006528

ABSTRACT:
A method and apparatus for the localized reduction of the lifetime of charge carriers in integrated electronic devices. The method comprises the step of implanting ions, at a high dosage and at a high energy level, of a noble gas, preferably helium, in the active regions of the integrated device so that the ions form bubbles in the active regions. A further thermal treatment is performed after the formation of bubbles of the noble gas in order to improve the structure of the bubbles and to make the noble gas evaporate, leaving cavities in the active regions.

REFERENCES:
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patent: 5198371 (1993-03-01), Li
Abstract of BE 843794 (Nov. 3, 1976), related to FR-A-2,320,636, obtained from the Derwent world patent index database.
Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICS, ISPSD "91 Baltimore, MD, US 2Apr. 22-24 1991, New York, NY, USA, IEEE USA, Akiyama H. et al. " Partial Lifetime Control In IGBT By Helium Irradiation Through Mask Patterns.
Physical Review B (Condensed Matter), Jul. 15, 1994, USA vol. 50. No. 4, ISSN 0163-1829, pp. 2458-2473, Seager C. H. et al., "Electrical Properties of He-Implantation-Produced Nanocavities in Silicon".
Patent Abstracts of Japan, vol 017, No. 453 (E-1417), Aug. 19, 1993 & JP-A-05 102161 Toshiba Corp.
Nuclear Instruments & Methods in Physics Research, Section B. Oct. 1987, Netherlands, vol. b28, No. 3, pp. 360-363, Evans J. H. et al., "The annealing of Helium-Induced Cavities in Silicon and the Inhibiting Role Of Oxygen".
Nuclear Instruments & Methods in Physics Research, Section B, Jul. 1987, Netherlands, vol. b27, No. 3, pp. 417-420, Griffioen C C et al., Helium Desorption/Permeation From Bubbles in Silicon: A Novel Method of Viod Production.

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