Optics: measuring and testing – By alignment in lateral direction – With registration indicia
Reexamination Certificate
2006-02-28
2006-02-28
Lauchman, Layla G. (Department: 2877)
Optics: measuring and testing
By alignment in lateral direction
With registration indicia
Reexamination Certificate
active
07006227
ABSTRACT:
A method and apparatus is provided to identify material boundaries and assist in the alignment of pattern masks in semiconductor fabrication. The invention probes a layer step or feature edge of an individual wafer using spectroscopic reflectance to detect a change in the reflectance spectral response. In integrated circuit fabrication, a wafer is subjected to wafer fabrication processes to produce a number of individual layers on a semiconductor substrate. During processing a reflectometer, a light emitting and collecting device, emits a specific range of electromagnetic wavelengths which are reflected from the wafer surface. The intensity of the reflected light is monitored for changes which signify the detection of a feature edge. The use of a specific range of electromagnetic wavelengths with the reflectometer allows the apparatus to detect feature edges covered by visibly-opaque material. After a feature edge has been detected, positional information associated with the detected feature edge may be used to accurately align a pattern mask.
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Dickstein , Shapiro, Morin & Oshinsky, LLP
Lauchman Layla G.
Micro)n Technology, Inc.
Stock, Jr. Gordon J.
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