Apparatus for the growth of single crystals

Details Apparatus for the growth of single crystals Apparatus for the growth of single crystals

1984-06-28

1989-10-10

Richman, Barry S.

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

1566171, 1566201, 156624, 156DIG70, 156DIG72, 156DIG77, 156DIG81, 156DIG92, 156DIG93, 156DIG83, B01D 900

Patent

active

048730629

ABSTRACT:
In an apparatus for the Czochralsky growth of compound single crystals wherein a single crystal growing portion is provided in a sealed vessel whose opening part is sealed by a B.sub.2 O.sub.3 melt and which contains therein an atmosphere of a volatile element of the compound, at least the inner wall the sealed vessel is made of a material having a melting point of at least 1400.degree. C., selected from Group III-V compounds and oxides of Group III or V elements. Compound single crystals such as GaAs, GaP, InAs, InP, ZnS, ZnSe and CdS obtained by the use of this apparatus are free from contamination with silicon.

REFERENCES:
patent: 1646325 (1927-10-01), Strassmann
patent: 2311349 (1943-02-01), Puening
patent: 3716345 (1973-02-01), Grabmaier
patent: 3853487 (1974-12-01), Meuleman et al.
patent: 3857679 (1974-12-01), Allred
patent: 4235848 (1980-11-01), Sokolov et al.
patent: 4478675 (1984-10-01), Akai
patent: 4483735 (1984-11-01), Inada et al.
Moulin et al; Growth of GaAs Single Crystal by a Rotating Liquid Seal Method; J. of Crystal Growth, 24/25 (1974), pp. 376-379.
Leung et al; Liquid-Seal Czochralski Growth of Gallium Arsenide; J. of Crystal Growth, 19 (1973), pp. 356-358.

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