Apparatus for the growth of semiconductor crystals

Details Apparatus for the growth of semiconductor crystals Apparatus for the growth of semiconductor crystals

1985-12-06

1987-09-15

Smith, John D.

Coating apparatus

Gas or vapor deposition

118723, 156DIG103, C23C 1600

Patent

active

046932070

ABSTRACT:
An apparatus for the growth of semiconductor crystals in which the surface of a substrate is irradiated with molecular beam containing elements by which semiconductor thin films are formed on the substrate within a molecular beam epitaxial growth chamber in a high vacuum, thereby achieving molecular beam epitaxial growth of semiconductor thin films onto the substrate, wherein said molecular beam epitaxial growth chamber comprises an optical window through which light is introduced into said growth chamber and irradiates the surface of said substrate during molecular beam epitaxial growth.

REFERENCES:
patent: 4434189 (1984-02-01), Zaplatynsky
patent: 4550684 (1985-11-01), Mahawili
patent: 4560576 (1985-12-01), Lewis et al.
patent: 4568565 (1986-02-01), Gupta et al.

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