Apparatus for the formation of epitaxial layers doped with condu

Details Apparatus for the formation of epitaxial layers doped with condu Apparatus for the formation of epitaxial layers doped with condu

1977-12-08

1979-04-24

Dixon, Harold A.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250492B, A61K 2702

Patent

active

041514203

ABSTRACT:
An apparatus for depositing a monocrystalline epitaxial layer of semiconductor material, e.g., silicon containing selected conductivity-determining impurities, on a semiconductor substrate comprising directing a beam of ions of said semiconductor material at the surface of the semiconductor substrate at an energy level below 0.5 Kev., and simultaneously directing a beam of the conductivity-determining impurity ions at at least a portion of the substrate surface whereby a layer of semiconductor material containing said conductivity-determining impurities is formed on said surface, and heating said layer to a temperature of at least 550.degree. C. to render said layer monocrystalline. The beams of semiconductor ions and of conductivity-determining impurity ions are preferably maintained at a high current density of at least 1 ma/cm.sup.2 at the surface of said semiconductor substrate even with a preferable relatively broad beam having diameters of up to 15 cm. Such wide beams are desirably achieved by ion beam apparatus having a high intensity source with a multi-aperture source exit plate.

REFERENCES:
patent: 3434894 (1969-03-01), Gale
"Germanium & Silicon Film Growth by Low Energy Ion Beam Deposition", Japanese Journal of Applied Physics, vol. 16, No. 2, Feb., 1977, pp. 245-251.

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