Apparatus for the etching for semiconductor devices

Details Apparatus for the etching for semiconductor devices Apparatus for the etching for semiconductor devices

1981-08-05

1983-01-11

Weisstuch, Aaron

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

204192E, 204298, 156643, 42218304, C23F 100, C23C 1500

Patent

active

043680925

ABSTRACT:
Apparatus for the etching of semiconductor devices which includes, in combination, an etching chamber containing the semiconductor device to be etched, an electrodeless etching plasma forming chamber having an inlet connected to a source of continuously flowing etching gas and having an outlet connected to said etching chamber in fluid flow communication; a helical inductive resonator coupler for coupling a source of R.F. electrical power into the electrodeless plasma forming chamber for continuously forming etching plasma from the etching gas flowing therethrough; this inductive resonator coupler including a grounded hollow cylinder of electrically conductive material, with a grounded base member at one end; a helically coiled wire conductor concentrically mounted within the cylinder and spaced from the inner walls thereof; the plasma forming chamber being mounted substantially concentrically within the coil, the end of the coil toward the base member being grounded; and an electrical coupling for applying into the coil an R.F. source of electrical power at a position near, but spaced from, the grounded end thereof.

REFERENCES:
patent: 3873884 (1975-03-01), Gabriel
patent: 4123663 (1978-10-01), Horiike
patent: 4138306 (1979-02-01), Niwa
patent: 4160690 (1979-07-01), Shibagaki et al.
patent: 4175235 (1979-11-01), Niwa et al.
patent: 4233109 (1980-11-01), Nishizawa
patent: 4284489 (1981-08-01), Weber

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