Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2002-11-12
2004-05-25
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S059000, C257S291000, C257S292000, C438S070000, C438S073000
Reexamination Certificate
active
06740905
ABSTRACT:
FIELD OF THE INVENTION
This invention generally relates to electronic systems and in particular it relates to semiconductor image sensing devices.
BACKGROUND OF THE INVENTION
Cross talk is a phenomenon that degrades the resolution of CMOS imagers at longer wavelength. Degradation in resolution manifests itself as blurring or reduction in contrast.
The origin of cross talk is the diffusion of photo-generated electrons from the neighboring pixels (receiving light stimulus) to pixels that are not supposed to receive light stimulus. Cross talk increases with incident light wavelength. This is due to the fact that: (1) longer wavelengths are absorbed deeper in the silicon, and (2) isotropic diffusion process from the absorption point looses the spatial information on light source.
SUMMARY OF THE INVENTION
An image sensor with improvements for suppressing cross talk without degrading red light response. This is accomplished by implanting a deep p+ layer under blue and green pixels but not under red pixels in a standard RGB pattern color filter array.
REFERENCES:
patent: 6365916 (2002-04-01), Zhong et al.
patent: 6518085 (2003-02-01), Wang et al.
patent: 6548833 (2003-04-01), Lin et al.
Kaya Cetin
Unnikrishnan Sreenath
Brady III W. James
Nelms David
Nguyen Dao H.
Stewart Alan K.
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