Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1992-10-14
1995-10-31
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 33, 117214, C30B 1502
Patent
active
054620104
ABSTRACT:
An apparatus for continuously supplying granular polycrystal silicon to a crucible of a semiconductor single crystal pulling apparatus, comprising a funnel-shaped tank having a relatively large capacity, a main hopper having a relatively small capacity and weight, a subhopper having an intermediate capacity and weight and providing a passage from said tank to said main hopper, and a weight sensor for detecting the weight of the main hopper, wherein the overall weight of the main hopper is measured to obtain the flow rate (supply rate) of the granular polycrystal silicon.
REFERENCES:
patent: 3768628 (1973-10-01), Bross
patent: 3998686 (1976-12-01), Meiling et al.
patent: 4002274 (1977-01-01), Rice
patent: 4849175 (1989-07-01), Dupain et al.
patent: 5229082 (1993-07-01), Seidensticker et al.
Fusegawa Izumi
Mizuishi Koji
Ogino Katsuhiko
Takano Kiyotaka
Yamagishi Hirotoshi
Breneman R. Bruce
Garrett Felisa
Shin-Etsu Handotai & Co., Ltd.
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