Semiconductor device manufacturing: process – Miscellaneous
Reexamination Certificate
2007-10-09
2007-10-09
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Miscellaneous
C438S770000, C118S725000, C257SE21268
Reexamination Certificate
active
10933890
ABSTRACT:
A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O as it enters the high pressure oxidation furnace. This catalyst is used in an environment of between five (5) atmospheres to twenty-five (25) atmospheres N2O and a temperature range of 600° C. to 750° C., which are the conditions that lead to the N2O going super critical. By preventing the N2O from becoming super critical, the reaction is controlled that prevents both temperature and pressure spikes. The catalyst can be selected from the group of noble transition metals and their oxides. This group can comprise palladium, platinum, iridium, rhodium, nickel, silver, and gold.
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Nitraded Oxides, Silicon Processing for the VLSI Era—vol. III, pp. 648-661.
Al-Shareef Husam N.
Chapek Dave
DeBoer Scott
Gealy Daniel F.
Thakur Randhir
Ghyka Alexander
Micro)n Technology, Inc.
TraskBritt
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