Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Reexamination Certificate
1998-12-29
2001-05-08
Nguyen, Nam (Department: 1753)
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
C204S298260
Reexamination Certificate
active
06228234
ABSTRACT:
BACKGROUND OF THE INVENTION
This invention relates to an apparatus for sputtering provided with a reactive gas jetting pipe for supplying reactive gas into the pipe having a plurality of gas nozzles provided in a chamber and for jetting the reactive gas from the gas nozzles.
DESCRIPTION OF RELATED ART
FIG. 1A
is a plan view for illustrating schematically a reactive gas jetting pipe of a conventional apparatus for sputtering,
FIG. 1B
is a cross sectional view along the line
1
B—
1
B shown in
FIG. 1A
, and
FIG. 1C
is a perspective enlarged view of the gas nozzle shown in FIG.
1
B.
As shown in
FIGS. 1A and 1B
, the reactive gas jetting pipe
1
is connected to a vacuum chamber outer wall
4
through an in-vacuum chamber connector
3
. The in-vacuum chamber connector
3
is connected to a gas pipe
5
through an out-vacuum chamber connector gas pipe connector
5
a
, and the gas pipe
5
is connected to a reactive gas cylinder
7
through a reactive gas flow rate control valve
6
.
The reactive gas pipe
1
is located between targets
2
, and thirty metal gas nozzles
8
are provided downward with respect to the pipe (in the direction opposite to the target front side). The gas nozzles are formed in a screw shape as shown in
FIG. 1C
, and a hole
8
a
for guiding gas is provided through from the base of a screw to the top. Gas flow rate jetted from the hole
8
a
is controlled by adjusting the size of the hole
8
a
to a suitable size. Thereby, gas flow rate in the longitudinal direction of the reactive gas pipe
1
is controlled, and the evenness of the film thickness of sputtering film is secured.
As described herein above, the reactive gas jetting pipe
1
has gas nozzles
8
provided downward as shown in FIG.
1
B. In other words, the gas nozzles
8
are disposed on the back side of the reactive gas pipe
1
. In addition, the reactive gas pipe
1
is fixed to the chamber outside wall
4
through the in-vacuum chamber connector
3
and the out-vacuum chamber gas pipe connector
5
a
. To replace or adjust the gas nozzles
8
, it is required to detach the in-vacuum chamber connector
3
and the out-vacuum chamber gas pipe connector
5
a
and to take out the reactive gas pipe
1
completely outside the vacuum chamber, because the reactive gas pipe
1
is combined solidly with base which fixes the reactive gas pipe
1
. Therefore, it takes a very long time to adjust the gas nozzles
8
.
OBJECT AND SUMMARY OF THE INVENTION
The present invention has been accomplished in view of the above-mentioned problem, and it is the object of the present invention to provide an apparatus for sputtering in which gas flow rate is adjustable easily and quickly.
To solve the above-mentioned problem, the apparatus for sputtering in accordance with the present invention is an apparatus for sputtering in which reactive gas is supplied to a pipe having a plurality of gas nozzles provided in a chamber and the reactive gas is jetted from the gas nozzles, wherein a connector for detaching the pipe is provided in the chamber. An above-mentioned gas nozzles preferably comprise a screw, each screw has a hole for jetting reactive gas.
A plurality of gas nozzles with hole diameter distribution are prepared previously, and the gas nozzles can be replaced for the existing gas nozzles. As the result, the gas flow rate is changed easily in a short time.
The above-mentioned gas nozzles are disposed in the outside direction of the chamber, thereby the operation that the gas nozzles are detached and replaced for other gas nozzles is made easy.
The above-mentioned gas nozzles are provided with means for changing the diameter, thereby it is made possible to control the flow rate of reactive gas jetted from the gas nozzles.
REFERENCES:
patent: 5130170 (1992-07-01), Kanai et al.
patent: 5318633 (1994-06-01), Yamamoto et al.
patent: 5798029 (1998-08-01), Morita
patent: 2-213468 (1990-08-01), None
patent: 55-230640 (1993-09-01), None
patent: 5-320891 (1993-12-01), None
Kakinuma Masayasu
Oshima Yoshihiro
Cantelmo Gregg
Kananen Ronald P.
Nguyen Nam
Rader Fishman & Grauer
Sony Corporation
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